(China (Mainland))
Product Summary
The GT60M303 is a silicon N channel IGBT.
Parametrics
GT60M303 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 900 V; (2)Gate-Emitter Voltage, VGES: ±25 V; (3)Collector Power Dissipation (Tc = 25°C) PC: 170 W; (4)Junction Temperature, Tj: 150 °C; (5)Storage Temperature Range, Tstg: -55~150 °C; (6)Screw Torque ― 0.8 N·m.
Features
GT60M303 features: (1)Fourth generation IGBT; (2)FRD included between emitter and collector; (3)Enhancement mode type; (4)High speed IGBT : tf = 0.25μs (TYP.) FRD : trr = 0.7μs (TYP.) ; (5)Low saturation voltage : VCE (sat) = 2.1V (TYP.).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 GT60M303(Q) |
Toshiba |
IGBT Transistors 900V/60A DIS+FRD Trench |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
GT60M303(Q) |
Toshiba |
IGBT Transistors 900V/60A DIS+FRD Trench |
Data Sheet |
Negotiable |
|
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 |
GT60N322(Q) |
Toshiba |
IGBT Transistors IGBT 1000V 57A |
Data Sheet |
Negotiable |
|
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|
GT60N322 |
Other |
|
Data Sheet |
Negotiable |
|
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|
GT60N321(Q) |
Toshiba |
IGBT Transistors IGBT 1000V 60A |
Data Sheet |
|
|
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|
GT60N321 |
Other |
|
Data Sheet |
Negotiable |
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GT60M323(Q) |
Toshiba |
IGBT Transistors IGBT, 900V, 60A |
Data Sheet |
Negotiable |
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